DocumentCode
2537768
Title
RF MEMS switches integrated with sealed suspended coplanar waveguides for reconfigurable RF circuits
Author
Kuwabara, K. ; Takagahara, K. ; Morimura, H. ; Sato, Y.
Author_Institution
NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
fYear
2011
fDate
5-9 June 2011
Firstpage
832
Lastpage
835
Abstract
This paper describes an RF-MEMS switch structure and its fabrication process for developing low-loss multiport RF switches that integrate multiple RF MEMS switches and CMOS control circuits. In our structure, RF MEMS switches and coplanar waveguides are seamlessly integrated, and they are suspended above a CMOS LSI to reduce the loss due to the lossy Si substrate. A gold multilayer stacking technique was used to fabricate the structures, and the STP technique was used to seal them for damage-free packaging. Switching operation of RF MEMS switches was achieved and low insertion loss of 0.07 dB/mm at 5 GHz was obtained for the suspended coplanar waveguides.
Keywords
CMOS integrated circuits; coplanar waveguides; field effect MMIC; microfabrication; microswitches; stacking; CMOS LSI; CMOS control circuits; RF MEMS switches; STP technique; Si; damage-free packaging; fabrication process; frequency 5 GHz; gold multilayer stacking technique; low-loss multiport RF switches; reconfigurable RF circuits; sealed suspended coplanar waveguides; CMOS integrated circuits; Coplanar waveguides; Electromagnetic waveguides; Microswitches; Radio frequency; Coplanar waveguide; Integration; RF MEMS; Sealing; Suspension; Switch;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location
Beijing
ISSN
Pending
Print_ISBN
978-1-4577-0157-3
Type
conf
DOI
10.1109/TRANSDUCERS.2011.5969680
Filename
5969680
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