• DocumentCode
    2537768
  • Title

    RF MEMS switches integrated with sealed suspended coplanar waveguides for reconfigurable RF circuits

  • Author

    Kuwabara, K. ; Takagahara, K. ; Morimura, H. ; Sato, Y.

  • Author_Institution
    NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    832
  • Lastpage
    835
  • Abstract
    This paper describes an RF-MEMS switch structure and its fabrication process for developing low-loss multiport RF switches that integrate multiple RF MEMS switches and CMOS control circuits. In our structure, RF MEMS switches and coplanar waveguides are seamlessly integrated, and they are suspended above a CMOS LSI to reduce the loss due to the lossy Si substrate. A gold multilayer stacking technique was used to fabricate the structures, and the STP technique was used to seal them for damage-free packaging. Switching operation of RF MEMS switches was achieved and low insertion loss of 0.07 dB/mm at 5 GHz was obtained for the suspended coplanar waveguides.
  • Keywords
    CMOS integrated circuits; coplanar waveguides; field effect MMIC; microfabrication; microswitches; stacking; CMOS LSI; CMOS control circuits; RF MEMS switches; STP technique; Si; damage-free packaging; fabrication process; frequency 5 GHz; gold multilayer stacking technique; low-loss multiport RF switches; reconfigurable RF circuits; sealed suspended coplanar waveguides; CMOS integrated circuits; Coplanar waveguides; Electromagnetic waveguides; Microswitches; Radio frequency; Coplanar waveguide; Integration; RF MEMS; Sealing; Suspension; Switch;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
  • Conference_Location
    Beijing
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0157-3
  • Type

    conf

  • DOI
    10.1109/TRANSDUCERS.2011.5969680
  • Filename
    5969680