InP DHBT mixed-signal specific ICs for advanced 40 Gb/s transmitters

Author

Godin, J. ; Konczykowska, A. ; Riet, M. ; Berdaguer, P. ; Moulu, J. ; Puyal, V. ; Jorge, F. ; Vuye, S. ; Lefevre, R.

Author_Institution

Alcatel R&I-Opto+, Marcoussis, France

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

89

Lastpage

92

Abstract

Various mixed signal ASICs have been designed to address 40 Gb/s optical transmission experiment needs, and realized specific research transmitters. These circuits have been fabricated using a self-aligned InP DHBT process. Three transmitters have been assembled using these IC: i) an EAM-based; ii) a DDA-based; iii) a PSBT/DPSK transmitter. Design and characterization of these circuits are reported.

Keywords

III-V semiconductors; binary sequences; bipolar integrated circuits; differential phase shift keying; distributed amplifiers; electro-optical modulation; electroabsorption; indium compounds; integrated circuit design; mixed analogue-digital integrated circuits; optical transmitters; 40 Gbit/s; DDA-based transmitter; EAM-based transmitter; InP; InP HBT; PSBT-DPSK transmitter; circuit characterization; circuit design; mixed signal ASICs; mixed-signal specific IC; optical transmission; research transmitters; self-aligned InP DHBT process; Circuits; Clocks; DH-HEMTs; Differential quadrature phase shift keying; Heterojunction bipolar transistors; Indium phosphide; Optical films; Optical transmitters; Signal design; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392499

Filename

1392499