Title :
One-dimensional linear acoustic bandgap structures for performance enhancement of AlN-on-Silicon micromechanical resonators
Author :
Sorenson, L. ; Fu, J.L. ; Ayazi, F.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This work introduces piezo-on-silicon linear acoustic bandgap (LAB) structures, a class of compact 1D micro-scale phononic crystal (PC) which can be directly integrated with micromechanical devices. Finite element simulations with custom-derived dispersion equations predict multiple bandgaps for coupled-ring LAB structures into the GHz region. AlN-on-Si resonator are replaced with coupled-ring LAB tethers to reduce acoustic loss into the substrate; the existence of bandgaps is experimentally confirmed in transmission spectra of test structures as well as quality factor (Q) and insertion loss (IL) improvements of LAB-enhanced resonators. An IL of 3.8 dB at 178 MHz and Qs of greater than 11,000 at 600 MHz in air are reported.
Keywords :
III-V semiconductors; acoustic resonators; acoustic wave scattering; aluminium compounds; crystal resonators; finite element analysis; micromechanical resonators; phononic crystals; photonic band gap; silicon; wide band gap semiconductors; 1D microscale phononic crystal; AlN-Si; custom derived dispersion equations; finite element simulation; frequency 178 MHz; frequency 600 MHz; micromechanical resonators; one dimensional linear acoustic bandgap structure; piezo-on-silicon linear acoustic bandgap structure; Acoustics; Finite element methods; Frequency measurement; Mathematical model; Optical resonators; Photonic band gap; Resonant frequency; Phononic crystal; acoustic bandgap; one-dimensional; piezoelectric-on-silicon resonator; quality factor; support loss;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969685