Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process

A high yield low insertion loss switch (LIL switch) for GSM and WLAN applications was demonstrated by using 0.5 μm gate length InGaP/AlGaAs/InGaAs pHEMT technology. In order to improve the chip yield during gate recess process, the high-selectivity InGaP Schottky layer design was applied in this study. Besides, ordering type InGaP Schottky layer also provides an extreme lower ΔE_c (<0.1eV) as compared with AlGaAs ones and this character is helpful to improve contact resistance and insertion loss performance of switch. The fabricated LIL switch IC achieved a low insertion loss of 0.18 dB under a 0.9 GHz operation. In addition, the output power density of this proposed InGaP/AlGoAs/InGaAs pHEMT has demonstrated 284mW/mm under V_ds of 3 V at 2 GHz operation. Therefore, this 6-inch production pHEMT switch process exhibited a high potential in LIL switch and PA MMIC design for GSM and WLAN applications.