DC hot carrier stress effect on CMOS 65nm 60 GHz power amplifiers

Author

Quémerais, T. ; Moquillon, L. ; Huard, V. ; Fournier, J.-M. ; Benech, P. ; Corrao, N.

Author_Institution

IMEP-LHAC, UMR INPG/UJF/US/CNRS, Grenoble, France

fYear

2010

fDate

23-25 May 2010

Firstpage

351

Lastpage

354

Abstract

The effects of dc hot carrier stress on the characteristics of 60GHz power amplifiers on CMOS 65nm are investigated. The increase in the threshold voltage, the decrease in the transconductance and the output conductance of the MOSFETs caused by hot carriers leads to a loss performances of the PAs. A reliability study is first made on a 1 stage PA to validate the ageing model and the degradation explanation. A drop of 5% the gain, 7% of the OCP_1dB, 7% of the P_sat are measured at 58GHz after 50 hours of stress under Vdd=1.7V on a 4 stages amplifier.

Keywords

CMOS integrated circuits; MOSFET; hot carriers; millimetre wave power amplifiers; CMOS; DC hot carrier stress effect; MOSFET; frequency 58 GHz; frequency 60 GHz; output conductance; power amplifiers; size 65 nm; transconductance; voltage 1.7 V; Aging; Degradation; Gain measurement; Hot carriers; MOSFETs; Power amplifiers; Semiconductor device modeling; Stress; Threshold voltage; Transconductance; 65nm technology; CMOS mmw circuits; hot carrier stress; power amplifier; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477310

Filename

5477310