Title :
A 5 GHz fully integrated full PMOS low phase noise LC VCO
Author :
De Astis, Giuseppe ; Cordeau, David ; Paillot, Jean-Marie ; Dascalescu, Lucian
Author_Institution :
ACCO S.A., Saint Germain En Laye, France
Abstract :
A 5 GHz fully integrated, full PMOS, low phase noise and low power differential voltage controlled oscillator (VCO) is presented. This circuit is implemented in a 0.35 μm, 4-metal, BiCMOS SiGe process. At 2.7 V power supply voltage and a total power dissipation of only 13.5 mW, the proposed VCO features a worst case phase noise of -97 dBc/Hz and -117 dBc/Hz at 100 kHz and 1 MHz frequency offset respectively. The oscillator is tuned from 5.13 to 5.68 GHz with a tuning voltage varying from 0 to 2.7 V.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MOS integrated circuits; elemental semiconductors; inductors; low-power electronics; phase noise; varactors; voltage-controlled oscillators; 0 to 2.7 V; 0.35 micron; 1 MHz; 100 kHz; 13.5 mW; 2.7 V; 5 GHz; 5.13 to 5.68 GHz; BiCMOS SiGe process; SiGe; cyclostationary noise; full PMOS; fully integrated LC VCO; low phase noise LC VCO; low power differential voltage controlled oscillator; symmetric center-tapped inductor; varactors; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Phase noise; Power dissipation; Power supplies; Silicon germanium; Tuning; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392519
