Title :
A switched-capacitor mm-wave VCO in 65 nm digital CMOS
Author :
Nariman, Mohammad ; Rofougaran, Reza ; De Flaviis, Franco
Author_Institution :
Univ. of California at Irvine, Irvine, CA, USA
Abstract :
A 34-40 GHz VCO fabricated in 65 nm digital CMOS technology is demonstrated in this paper. The VCO uses a combination of switched capacitors and varactors for tuning and has a maximum Kvco of 240 MHz/V. It exhibits a phase noise of better than -98 dBc/Hz @ 1-MHz offset across the band while consuming 12 mA from a 1.2-V supply, an FOMT of -182.1 dBc/Hz. A cascode buffer following the VCO consumes 11 mA to deliver 0 dBm LO signal to a 50Ω load.
Keywords :
CMOS integrated circuits; buffer circuits; millimetre wave oscillators; phase noise; switched capacitor networks; varactors; voltage-controlled oscillators; FOMT; cascode buffer; current 11 mA; current 12 mA; digital CMOS technology; frequency 34 GHz to 40 GHz; phase noise; size 65 nm; switched capacitors; switched-capacitor mm-wave VCO; varactors; voltage 1.2 V; Voltage-controlled oscillators; CMOS LC-VCO; FOMT; figure of merit; mm-wave; phase noise; switched capacitor; tuning range;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477323
