• DocumentCode
    25384
  • Title

    Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate

  • Author

    Jin Zhang ; van der Zwan, Michiel ; Ishihara, Ryoichi

  • Author_Institution
    Delft Univ. of Technol., Delft, Netherlands
  • Volume
    10
  • Issue
    11
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    945
  • Lastpage
    949
  • Abstract
    Single-grain (SG) Si TFTs were fabricated from sputtered a-Si to achieve high performance TFTs on a polyimide substrate using a low temperature (350 °C) process including μ-Czochralski crystallization. The carrier mobility is 309 cm2/V·s and 126 cm2/V·s for electrons and holes, respectively. The devices are also successfully transferred to a flexible polyethylene naphyhalate (PEN) foil.
  • Keywords
    carrier mobility; crystal growth from melt; crystallisation; elemental semiconductors; polymer films; silicon; thin film transistors; μ-Czochralski crystallization; PEN foil; SG; Si; carrier mobility; electrons; flexible polyethylene naphyhalate foil; high performance TFTs; holes; low temperature process; polyimide substrate; single-grain silicon TFTs; sputtered silicon; Charge carrier processes; Films; MOS devices; Polyimides; Silicon; Substrates; Thin film transistors; $mu$-Czochralski Process; Polyimide; single-grain TFTs; sputtered-Si;
  • fLanguage
    English
  • Journal_Title
    Display Technology, Journal of
  • Publisher
    ieee
  • ISSN
    1551-319X
  • Type

    jour

  • DOI
    10.1109/JDT.2014.2310511
  • Filename
    6762833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=25384