Title :
Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate
Author :
Jin Zhang ; van der Zwan, Michiel ; Ishihara, Ryoichi
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
Abstract :
Single-grain (SG) Si TFTs were fabricated from sputtered a-Si to achieve high performance TFTs on a polyimide substrate using a low temperature (350 °C) process including μ-Czochralski crystallization. The carrier mobility is 309 cm2/V·s and 126 cm2/V·s for electrons and holes, respectively. The devices are also successfully transferred to a flexible polyethylene naphyhalate (PEN) foil.
Keywords :
carrier mobility; crystal growth from melt; crystallisation; elemental semiconductors; polymer films; silicon; thin film transistors; μ-Czochralski crystallization; PEN foil; SG; Si; carrier mobility; electrons; flexible polyethylene naphyhalate foil; high performance TFTs; holes; low temperature process; polyimide substrate; single-grain silicon TFTs; sputtered silicon; Charge carrier processes; Films; MOS devices; Polyimides; Silicon; Substrates; Thin film transistors; $mu$-Czochralski Process; Polyimide; single-grain TFTs; sputtered-Si;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2014.2310511
