Reliability and modeling of GaN-based light emitting diode

Author

Hyunsoo Kim ; Ji-Myon Lee ; Chul Huh ; Sang-Woo Kim ; Dong-Joon Kim ; Seong-Ju Park ; Hyunsang Hwang

Author_Institution

Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea

fYear

2000

fDate

19-21 June 2000

Firstpage

73

Lastpage

74

Abstract

To date, a considerable body of data has been published relative to III-V nitride light emitting diodes. These diodes typically employ a lateral carrier injection type structure due to an insulating sapphire substrate. The use of a lateral carrier injection type structure, however, can lead to nonuniform current spreading due to difficulties in growing a high quality material (Eliashevich et al, 1999). In this regard, we report on an attempt to develop a model for uniform current spreading during LED performance.

Keywords

III-V semiconductors; current distribution; gallium compounds; light emitting diodes; semiconductor device models; semiconductor device reliability; wide band gap semiconductors; Al/sub 2/O/sub 3/; GaN-Al/sub 2/O/sub 3/; GaN-based light emitting diode; III-V nitride light emitting diodes; LED performance; insulating sapphire substrate; lateral carrier injection type structure; material growth quality; modeling; nonuniform current spreading; reliability; uniform current spreading model; Conductivity; Current density; Data engineering; Heating; Insulation; Light emitting diodes; Materials science and technology; Reliability engineering; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2000. Conference Digest. 58th DRC

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-6472-4

Type

conf

DOI

10.1109/DRC.2000.877095

Filename

877095