RF-LDMOS: a device technology for high power RF infrastructure applications

Author

Burger, Wayne ; Brech, Helmut ; Burdeaux, David ; Dragon, Chris ; Formicone, Gabriele ; Honan, Michele ; Pryor, Bob ; Ren, Xiaowei

Author_Institution

RF Div., Freescale Semicond., Tempe, AZ, USA

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

189

Lastpage

192

Abstract

RF-LDMOS is the dominant device technology used in high power wireless infrastructure applications for frequencies ranging from less than 900MHz to 2.7GHz. Its strong market leadership position is a direct result of the technology´s delivery of superior performance (gain, efficiency, linearity) at low cost while remaining compatible with high supply voltages. This paper will review recent RF-LDMOS development at Freescale, focusing upon performance in the 2.1 GHz band. Opportunities for future device development will also be presented.

Keywords

MOS integrated circuits; code division multiple access; power amplifiers; radio access networks; radiofrequency amplifiers; radiofrequency integrated circuits; 2.1 GHz; Freescale; RF-LDMOS; device development; device technology; high power RF infrastructure applications; power amplifier; wireless infrastructure; Computer networks; Costs; Frequency conversion; High performance computing; Human computer interaction; Lead compounds; Linearity; Performance gain; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392533

Filename

1392533