DocumentCode
2538685
Title
Semiconductor plasma rod attenuation dependencies of modes on the concentration of light and heavy holes
Author
Bubnelis, A. ; Nickelson, L. ; Martavicius, R.
Author_Institution
Dept. of Electron. Syst., Vilnius Gediminas Tech. Univ., Vilnius, Lithuania
Volume
2
fYear
2012
fDate
21-23 May 2012
Firstpage
487
Lastpage
490
Abstract
In this work are examined the phase and attenuation constants of open magnetoactive p-Ge rod waveguides. Our algorithm allows analyzing the very high waveguide losses. Dispersion characteristics of p-Ge with two component hole charge carriers waveguide are calculated when the ratio of heavy holes´ concentration in the material is equal to 25%, 50% and 75% of the total free carrier concentration. Dispersion characteristics of the main helicon and eight higher helicon modes are presented here. There are the degeneration and the transformation of higher hybrid modes at some heavy holes´ concentrations. The waveguide broadbandwidth can be considerably extended due to the fact that the losses of the higher modes are considerably larger in comparisons to the main mode loss at the certain heavy holes´ concentration.
Keywords
carrier density; dispersion (wave); semiconductor plasma; attenuation constants; dispersion characteristics; heavy holes; light holes; p-Ge rod waveguides; phase constants; semiconductor plasma rod attenuation dependencies; total free carrier concentration; very high waveguide losses; waveguide broadbandwidth; Decision support systems; carrier concentration; d. c. magnetic field; dispersion characteristics; gyrotropic waveguide; heavy and light holes; helicon waves; losses; p-Ge; phase constan; semiconductor plasma;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
Conference_Location
Warsaw
Print_ISBN
978-1-4577-1435-1
Type
conf
DOI
10.1109/MIKON.2012.6233592
Filename
6233592
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