A 150MHz, 84% efficiency, two phase interleaved DC-DC converter in AlGaAs/GaAs P-HEMT technology for integrated power amplifier modules

Author

Peng, Han ; Pala, V. ; Chow, T.P. ; Hella, Mona

Author_Institution

ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2010

fDate

23-25 May 2010

Firstpage

259

Lastpage

262

Abstract

This paper presents a high efficiency, high switching speed, two-stage interleaved DC-DC buck converter with negatively-coupled inductors in AlGaAs/GaAs technology, targeting integrated power amplifier modules. The flip chip DC-DC converter is implemented in 0.5 μm GaAs pHEMT process and occupies 2 × 2.1mm² without the output network. The inductors in the output network are implemented in 65 μm thick top copper metal layer and have a quality factor of 25 at 150 MHz. The interleaved DC-DC converter achieves 84% efficiency when operating at 150MHz switching frequency with 4.5V/3.3V conversion ratio and 1A load current.

Keywords

DC-DC power convertors; aluminium compounds; circuit switching; flip-chip devices; gallium arsenide; high electron mobility transistors; inductors; power amplifiers; AlGaAs-GaAs; current 1 A; flip chip DC-DC converter; frequency 150 MHz; high switching speed; integrated power amplifier module; negatively-coupled inductor; pHEMT process; size 0.5 mum; two phase interleaved DC-DC converter; two-stage interleaved DC-DC buck converter; Buck converters; Copper; DC-DC power converters; Flip chip; Gallium arsenide; High power amplifiers; Inductors; PHEMTs; Power amplifiers; Q factor; Gallium Arsenide Technology; conversion efficiency; coupled inductors; interleaved DC-DC converters; p-HEMT; supply modulators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477346

Filename

5477346