DocumentCode
2538774
Title
Temperature-dependence of a GaN-based HEMT monolithic X- band low noise amplifier
Author
Schwindt, R.S. ; Kumar, V. ; Aktas, O. ; Lee, J.W. ; Adesida, I.
Author_Institution
Dept. of Eng., Union Univ., Jackson, TN, USA
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
201
Lastpage
203
Abstract
The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at -43°C to 5.0 dB at 150degC.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium compounds; silicon compounds; wide band gap semiconductors; 15 dB; 150 C; 2.5 dB; 3.5 dB; 43 C; 5.0 dB; 7.5 dB; 8.5 GHz; 9.5 GHz; AlGaN-GaN; AlGaN/GaN HEMT; GaN; MMIC; SiC; gallium nitride; monolithic X- band low noise amplifier; wide bandgap; Circuit noise; Fabrication; Gallium nitride; Gold; HEMTs; High power amplifiers; Low-noise amplifiers; MMICs; Metal-insulator structures; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
ISSN
1550-8781
Print_ISBN
0-7803-8616-7
Type
conf
DOI
10.1109/CSICS.2004.1392536
Filename
1392536
Link To Document