Transistor and circuit design for 100-200 GHz ICs

Author

Rodwell, M. ; Griffith, Zach ; Scott, D. ; Wei, Y. ; Dong, Y. ; Paidi, V. ; Dahlström, M. ; Parthasarathy, N. ; Kadow, C. ; Urteaga, M. ; Pierson, R. ; Rowell, P. ; Lee, S. ; Nguyen, Ngac Ky ; Nguyen, N. ; Brar, B.

Author_Institution

Dept. of ECE, California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

207

Lastpage

210

Abstract

Compared to SiGe, InP HBTs offer superior electron transport but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws for improved circuit speed are introduced. Device and circuit results are summarized, including 390 GHz f_τ / 500 GHz f_max DHBTs, 174 GHz amplifiers, and 150 GHz static frequency dividers. To compete with 100 nm SiGe processes, InP must be similarly scaled, and high process yields are imperative. We describe several process modules in development, including emitter regrowth, emitter-base dielectric sidewall processes, and a collector pedestal implant process.

Keywords

bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; integrated circuit design; mixed analogue-digital integrated circuits; silicon compounds; 100 nm; 100 to 200 GHz; 150 GHz; 174 GHz; 390 GHz; HBT scaling laws; InP; InP HBT; SiGe; circuit speed DHBT; dielectric sidewall processes; electron transport; emitter regrowth; inferior scaling; integrated circuit design; mixed-signal IC; parasitic reduction; pedestal implant process; process yields; static frequency dividers; transistor; Circuit synthesis; Dielectrics; Double heterojunction bipolar transistors; Electrons; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Indium phosphide; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392539

Filename

1392539