DocumentCode
2538840
Title
Design and InP HEMT Technology for ultra-high speed digital ICs with beyond 80-Gbit/s operation
Author
Suzuki, T. ; Kawano, Y. ; Nakasha, Y. ; Takahashi, T. ; Makiyama, K. ; Hirose, T. ; Takikawa, M.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
211
Lastpage
214
Abstract
There is great interest in increasing the operating speed of digital circuits. Using 0.10-μm gate-length InP HEMT technology, to date we have developed a 144-Gbit/s multiplexer (MUX), a 80-Gbit/s demultiplexer (DEMUX), a 80-Gbit/s D-type flip-flop (D-FF), and a 90-GHz T-type flip-flop (T-FF). Key aspects of the fabrication, circuit design, and measurement are described in this paper.
Keywords
demultiplexing equipment; digital integrated circuits; flip-flops; high electron mobility transistors; high-speed integrated circuits; indium compounds; integrated circuit design; multiplexing equipment; 0.10 micron; 90 GHz; D-type flip-flop; InP; InP HEMT technology; T-type flip-flop; demultiplexer; multiplexer; ultra-high speed digital IC; Circuit synthesis; Cutoff frequency; Digital circuits; Fabrication; Flip-flops; HEMTs; Indium phosphide; Integrated circuit interconnections; Integrated circuit technology; Parasitic capacitance;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
ISSN
1550-8781
Print_ISBN
0-7803-8616-7
Type
conf
DOI
10.1109/CSICS.2004.1392540
Filename
1392540
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