Title :
An implanted-emitter 4H-SiC bipolar transistor with high current gain
Author :
Yi Tang ; Fedison, J.B. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
SiC has long been recognized as the material of choice for high voltage, high temperature, high power applications. Bipolar transistors are attractive due to their small forward voltage drop and ease of fabrication compared to MOSFETs. A previously fabricated epi-emitter BJT by Cree Research showed a common emitter current gain of 12 in 6H-SiC (Wang et al., 1995). The implanted-emitter BJT is more flexible in the control of the emitter depth and doping concentration compared to the epi-emitter BJT. In this work, we report an epi-base, implanted-emitter, npn bipolar transistor on 4H-SiC which shows a maximum common emitter current gain (/spl beta/) of 36; the highest current gain reported for any polytype of SiC. The forward drop is /spl sim/1 V at a forward current density of 50 A/cm/sup 2/.
Keywords :
current density; doping profiles; ion implantation; power bipolar transistors; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 1 V; 4H-SiC epi-base implanted-emitter npn bipolar transistor; 6H-SiC BJT; BJT fabrication; MOSFETs; SiC; bipolar transistors; common emitter current gain; current gain; doping concentration control; emitter depth control; epi-emitter BJT; forward current density; forward voltage drop; high voltage/high temperature applications; implanted-emitter 4H-SiC bipolar transistor; implanted-emitter BJT; maximum common emitter current gain; power applications; Annealing; Bipolar transistors; Current density; Doping; Electrical resistance measurement; Fabrication; Manufacturing; Silicon carbide; Temperature measurement; Voltage;
Conference_Titel :
Device Research Conference, 2000. Conference Digest. 58th DRC
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-6472-4
DOI :
10.1109/DRC.2000.877119
