Hot-via interconnects: a step toward surface mount chip scale packaged MMICs up to 110 GHz

Author

Bessemoulin, A. ; Gaessler, C. ; Gruenenpuett, J. ; Reig, B.

Author_Institution

United Monolithic Semicond., Orsay, France

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

237

Lastpage

240

Abstract

Two new techniques based on the RF hot-via concept have been developed for use in chip-scale packaged (CSP) MMICs. The first one utilizes backside bumps for die attach onto a substrate carrier; excellent RF performance has been achieved on both active-, and passive MMIC devices up to 110 GHz. The second technique is based on direct soldering of the MMIC backside interconnects onto low cost substrate carrier (RO4003), making it ideal for a wire-bond free full surface mount approach. To the author´s knowledge this is the first demonstration of such die attach-, and packaging techniques for MMICs. As application examples, experimental performance results obtained with both techniques, are presented for transmission lines, and broadband 30-GHz GaAs PHEMT amplifier MMICs.

Keywords

HEMT integrated circuits; MMIC; chip scale packaging; integrated circuit interconnections; surface mount technology; wideband amplifiers; 30 GHz; MMIC backside interconnects; RF hot-via; active MMIC devices; backside bumps; die attach; direct soldering; hot-via interconnects; passive MMIC devices; substrate carrier; surface mount chip scale packaged MMIC; wire-bond free full surface mount; Broadband amplifiers; Chip scale packaging; Costs; Gallium arsenide; MMICs; Microassembly; PHEMTs; Radio frequency; Soldering; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392548

Filename

1392548