Silicon/III–V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding

Author

Li, Linghan ; Higo, Akio ; Takigawa, Ryo ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan

fYear

2011

fDate

5-9 June 2011

Firstpage

2502

Lastpage

2505

Abstract

A silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode was developed and realized by silicon MEMS process and plasma assisted direct bonding. The InGaAsP Multiple Quantum Well (MQW) was integrated onto a SOI platform with highly doped micro rib by O₂/Ar plasma assisted bonding which greatly improves the electrical property between the heterointerface. The photon-electron conversion of the photodiode was successfully demonstrated. The waveguide photodiode shows around 50% quantum efficiency at 1550nm and TE polarization.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated circuit bonding; integrated optoelectronics; optical waveguides; p-i-n photodiodes; semiconductor quantum wells; silicon-on-insulator; InGaAsP-Si; MEMS process; SOI; TE polarization; active layer heterointegration; heterointerface; micro rib; multiple quantum well; photonelectron conversion; plasma assisted direct bonding; silicon; vertical PIN waveguide photodiode; wavelength 1550 nm; Bonding; Fiber optics; Optical device fabrication; Optical waveguides; Photodiodes; Silicon; Silicon/III–V heterointegration; direct bonding; hybrid waveguide; vertical PIN photodiode;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969752

Filename

5969752