High f/sub /spl tau// and f/sub max/ InAlAs-InGaAs transferred-substrate HBTs

Author

Betser, Y. ; Mensa, D. ; Jaganathan, S. ; Mathew, T. ; Rodwell, M.J.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2000

fDate

19-21 June 2000

Firstpage

141

Lastpage

142

Abstract

We report the design, fabrication and measurement of a high speed InAlAs-InGaAs heterostructure bipolar transistor (HBT). At a V/sub CE/ of 0.96 V the current gain cut-off frequency, f/sub /spl tau//, and the maximum oscillation frequency, f/sub max/, were 300 GHz and 235 GHz, respectively. This value of f/sub /spl tau// is the highest ever reported for bipolar transistors. At a slightly higher V/sub CE/ bias, simultaneously high values of f/sub /spl tau//=293 GHz and f/sub max/=275 GHz were obtained. Fast HBTs have become key components in future and current designs for 100 GHz digital communication systems, direct digital frequency synthesizers and radar. To achieve these goals, it is essential for the device to have simultaneous high values of f/sub /spl tau// and f/sub max/ capability for high current density operation and a low extrinsic base collector capacitance.

Keywords

III-V semiconductors; aluminium compounds; capacitance; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; 0.96 V; 100 GHz; 235 GHz; 275 GHz; 293 GHz; 300 GHz; HBT design; HBT fabrication; HBT measurement; HBTs; InAlAs-InGaAs; InAlAs-InGaAs transferred-substrate HBTs; bipolar transistors; current density; current gain cut-off frequency; digital communication systems; direct digital frequency synthesizers; extrinsic base collector capacitance; high speed InAlAs-InGaAs HBT; high speed InAlAs-InGaAs heterostructure bipolar transistor; maximum oscillation frequency; radar; Bipolar transistors; Capacitance; Current density; Cutoff frequency; Digital communication; Fabrication; Frequency synthesizers; Heterojunction bipolar transistors; Radar; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2000. Conference Digest. 58th DRC

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-6472-4

Type

conf

DOI

10.1109/DRC.2000.877123

Filename

877123