SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications

Author

Krishnamurthy, V. ; Hershberger, K. ; Eplett, B. ; Dekosky, J. ; Zhao, H. ; Poulin, D. ; Rood, R. ; Prince, E.

Author_Institution

VT Silicon, Inc., Atlanta, GA, USA

fYear

2010

fDate

23-25 May 2010

Firstpage

569

Lastpage

572

Abstract

SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3-2.7 GHz operation with <;4% EVM and 18% efficiency while meeting spectral mask and exhibiting -43 dBm/MHz second harmonic levels. For TD-LTE, Band 40 (2.3-2.4 GHz) and FDD-LTE, Band 7 (2.500-2.570 GHz), this SiGe PA produces 28.5 dBm linear power while meeting 3GPP spectral mask and EVM specification for QAM 16.

Keywords

4G mobile communication; Ge-Si alloys; WiMax; power amplifiers; telecommunication standards; SiGe; efficiency 18 percent; frequency 2.3 GHz to 2.4 GHz; frequency 2.3 GHz to 2.7 GHz; frequency 2.50 GHz to 2.57 GHz; voltage 3.3 V; BiCMOS integrated circuits; CMOS integrated circuits; Germanium silicon alloys; Impedance matching; Power amplifiers; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Switches; WiMAX; 4G; LTE; PA; Power amplifier; SiGe; WIMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477364

Filename

5477364