Ultraviolet photon counting with GaN avalanche photodiodes

Author

McIntosh, K.A. ; Verghese, S. ; Molnar, R.J. ; Mahoney, L.J. ; Molvar, K.M. ; Connors, M.K. ; Aggarwal, R.L. ; Melngailis, I.L.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

fYear

2000

fDate

19-21 June 2000

Firstpage

169

Lastpage

170

Abstract

Recent demonstrations of GaN APDs with spatially uniform gain regions free of microplasmas reported multiplication gain (M) values of 10-25 (McIntosh et al, 1999; Carrano et al., 2000). We report here on photon counting, or Geiger-mode, measurements of GaN APDs which entail much greater avalanche gain (10/sup 4/\n\n\t\t

Keywords

III-V semiconductors; avalanche breakdown; avalanche photodiodes; gallium compounds; leakage currents; photon counting; radiation quenching; semiconductor device breakdown; ultraviolet detectors; wide band gap semiconductors; 13 percent; 20 nA; 325 nm; 400 kHz; GaN; GaN APDs; GaN avalanche photodiodes; Geiger-mode measurements; PDE; UV photon counting; applied voltage bias; avalanche gain; breakdown voltage; dark count rate; gated-quench mode operation measurements; leakage current; microplasmas; multiplication gain; passive-quench mode operation measurements; photon counting; photon detection efficiency; spatially uniform gain regions; ultraviolet photon counting; Avalanche breakdown; Avalanche photodiodes; Breakdown voltage; Current measurement; Gain measurement; Gallium nitride; Laboratories; Photoconductivity; Photonics; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2000. Conference Digest. 58th DRC

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-6472-4

Type

conf

DOI

10.1109/DRC.2000.877134

Filename

877134