An ultra-broadband 2–8 GHz GaN HEMT MMIC active combiner

Author

Bentini, Andrea ; Palomba, Mirko ; Palombini, Diego ; Limiti, Ernesto

Author_Institution

Dipt. di Ing. Elettron., Univ. degli Studi di Roma Tor Vergata, Rome, Italy

Volume

2

fYear

2012

fDate

21-23 May 2012

Firstpage

479

Lastpage

482

Abstract

In this contribution, a broadband active out-of-phase combiner designed in 0.5 μm GaN-HEMT technology developed by SELEX Sistemi Integrati is presented. The proposed MMIC is based on a distributed approach: exploiting the Drain line sharing, a dummy section and a single stage distributed amplifier, a 13.5 dB average differential gain, together with better than 10 dB input and output return losses and a CMRR better than 30 dB over the 2-8 GHz operating bandwidth are attained. The MMIC size is 2.9×3.3 mm².

Keywords

MMIC; distributed amplifiers; gallium compounds; high electron mobility transistors; GaN; MMIC active combiner; broadband active out-of-phase combiner; distributed approach; drain line sharing; frequency 2 GHz to 8 GHz; gain 13.5 dB; loss 10 dB; single stage distributed amplifier; ultra-broadband HEMT; Broadband amplifiers; Distributed amplifiers; Gallium nitride; MMICs; Microwave amplifiers; Microwave circuits; Active Combiner; Broadband Amplifier; Distributed Amplifier; GaN MMIC;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on

Conference_Location

Warsaw

Print_ISBN

978-1-4577-1435-1

Type

conf

DOI

10.1109/MIKON.2012.6233627

Filename

6233627