Title :
A linearity-enhanced wideband low-noise amplifier
Author :
Choi, Kihwa ; Mukherjee, Tamal ; Paramesh, Jeyanandh
Author_Institution :
Telecommun. Syst. Div., Samsung Electron., Suwon, South Korea
Abstract :
Techniques are proposed to enhance linearity in a low-voltage wideband LNA for use in a multi-standard wideband receiver. To achieve high linearity over wide frequency range, two previous IMD3 cancellation techniques are merged and modified to obtain IIP3 peaks at different frequencies, while minimizing component count. A self-biasing current reuse technique is developed to enhance low-voltage operation. Two LNAs are designed in 0.13 μm CMOS to demonstrate these techniques: the (Chebyshev, transformer) LNAs achieved (+10.6, +12.0) dBm IIP3 over (2.3-6.0, 2.0-5.3) GHz, (12.7, 12.4) dB gain, (4.8, 4.9) dB noise figure, while consuming 6.9mA from 1.2V.
Keywords :
CMOS integrated circuits; low noise amplifiers; CMOS; IIP3 peaks; IMD3 cancellation technique; current 6.9 mA; linearity-enhanced wideband low-noise amplifier; low-voltage wideband LNA; multistandard wideband receiver; self-biasing current reuse technique; size 0.13 mum; voltage 1.2 V; Bandwidth; CMOS process; Chebyshev approximation; Circuit topology; Frequency; Impedance matching; Linearity; Low-noise amplifiers; Voltage; Wideband;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477379
