Title :
Device modeling for III-V semiconductors - an overview
Author :
Root, David E. ; Iwamoto, Mitsugu ; Wood, John
Author_Institution :
Agilent Technol., Inc., Santa Rosa, CA, USA
Abstract :
This work presents an overview of several key technical considerations required for state-of-the-art nonlinear circuit simulation models of III-V HBT and FET devices. A unified large-signal modeling framework that incorporates the voltage and current dependence of nonlinear transit time and depletion capacitances in III-V HBTs, as well as the multiple voltage dependence of nonlinear capacitances in FETs is presented. Considerations for modeling thermal and electro-thermal interactions in III-V HBTs and FETs are reviewed and contrasted. Trends in advanced characterization techniques and their benefits for modeling are highlighted. Finally, selected recent advances in mathematical CAD techniques are reviewed with particular relevance for advanced circuit modeling of III-V devices.
Keywords :
III-V semiconductors; SPICE; circuit simulation; field effect transistors; heterojunction bipolar transistors; semiconductor device models; FET devices; GaAs; GaN; HBT devices; HEMT; III-V semiconductors; InP; SPICE; depletion capacitances; device physics; electro-thermal interactions; harmonic balance; large-signal modeling; mathematical CAD techniques; multiple voltage dependence; nonlinear circuit simulation models; nonlinear device modeling; nonlinear transit time; parameter extraction; thermal modelling; Circuit simulation; FETs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; III-V semiconductor materials; Modems; Physics; Predictive models; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392567
