Wafer-scale W-band power amplifiers using on-chip antennas

Author

Atesal, Yusuf A. ; Cetinoneri, Berke ; Alhalabi, Ramadan A. ; Rebeiz, Gabriel M.

Author_Institution

Univ. of California, La Jolla, CA, USA

fYear

2010

fDate

23-25 May 2010

Firstpage

469

Lastpage

472

Abstract

This paper presents, for the first time, a W-band SiGe power amplifier designed and fabricated together with a high-efficiency on-chip microstrip antenna. The antenna/amplifier results in an effective radiated power (ERP=P_tG_t) > 10 dBm from 88 to 98 GHz, with a peak of 14.6 dBm at 92 GHz. The chip consumes 120 mA from a 1.7 V supply. The antenna/amplifier approach can be extended to a large number of elements (8×8) and allows for efficient wafer-scale power combining and phased-array scanning.

Keywords

Ge-Si alloys; microstrip antennas; power amplifiers; current 120 mA; effective radiated power; frequency 88 GHz to 98 GHz; high efficiency on-chip microstrip antenna; on-chip antennas; phased-array scanning; voltage 1.7 V; wafer-scale W-band power amplifiers; CMOS technology; Germanium silicon alloys; High power amplifiers; Microstrip antennas; Millimeter wave integrated circuits; Phased arrays; Power amplifiers; Radiofrequency integrated circuits; Silicon germanium; Transmission lines; Millimeter-wave integrated circuits; W-band; power amplifier (PA); silicon germanium (SiGe) HBT;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477386

Filename

5477386