Title :
A 220 GHz metamorphic HEMT amplifier MMIC
Author :
Tessmann, A. ; Leuther, A. ; Massler, H. ; Kuri, M. ; Schwoerer, C. ; Schlechtweg, M. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg, Germany
Abstract :
We present the development of two 220 GHz low-noise amplifier (LNA) MMIC´s for use in high-resolution active and passive millimeter-wave imaging systems. The amplifier circuits have been realized using a 0.1 μm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (MHEMT) technology in combination with coplanar circuit topology and cascode transistors, thus leading to a compact chip-size and excellent gain performance. The realized single-stage cascode LNA exhibited a small-signal gain of 5 dB at 220 GHz and a maximum gain of 7 dB at 215 GHz with an over-all chip-size of 1 × 1 mm . The four-stage amplifier circuit achieved a linear gain of 20 dB at the frequency of operation and more than 10 dB over the bandwidth from 180 to 225 GHz while covering a chip-area of 1 × 2.5 mm2.
Keywords :
III-V semiconductors; MMIC amplifiers; high electron mobility transistors; indium compounds; millimetre wave amplifiers; 0.1 micron; 1 mm; 180 to 225 GHz; 20 dB; 220 GHz; 5 dB; 7 dB; InAlAs; InGaAs; MMIC amplifier; active millimeter-wave imaging; cascode transistors; coplanar circuit topology; coplanar waveguide; depletion-type MHEMT; four-stage amplifier circuit; low-noise amplifier; metamorphic HEMT amplifier; millimeter-wave amplifier; passive millimeter-wave imaging systems; single-stage cascode LNA; Gain; HEMTs; High-resolution imaging; Low-noise amplifiers; MMICs; MODFETs; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; mHEMTs;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392573
