DocumentCode :
2539792
Title :
A 40% PAE linear CMOS power amplifier with feedback bias technique for WCDMA applications
Author :
Jeon, Hamhee ; Lee, Kun-Seok ; Lee, Ockgoo ; An, Kyu Hwan ; Yoon, Youngchang ; Kim, Hyungwook ; Lee, Dong Ho ; Lee, Jongsoo ; Lee, Chang-Ho ; Laskar, Joy
Author_Institution :
Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2010
fDate :
23-25 May 2010
Firstpage :
561
Lastpage :
564
Abstract :
A highly efficient CMOS linear power amplifier for WCDMA applications with feedback bias technique is presented. The method involves connecting the gates of common-gate devices of the driver stage and the power stage in cascode configurations by a feedback network for enhancing linearity. To achieve high efficiency and linearity simultaneously, large-signal IMD minimum (IMD sweet spot) is properly used at the desired output power level. The proposed PA was fabricated in a 0.18-μm CMOS technology. The experimental results demonstrate a gain of 26 dB, a maximum output power of 26 dBm with 46.4% of peak PAE, and a linear output power of 23.5 dBm with 40% PAE using a 3GPP WCDMA modulated signal. Both simulation and measurement results show an excellent large-signal IMD minimum at the output power using a WCDMA modulated signal.
Keywords :
CMOS integrated circuits; broadband networks; code division multiple access; power amplifiers; radiofrequency amplifiers; 3GPP WCDMA modulated signal; CMOS technology; IMD sweet spot; PAE linear CMOS power amplifier; WCDMA application; cascode configuration; common-gate device; driver stage; feedback bias; feedback network; gain 26 dB; large-signal IMD minimum; linear output power; power stage; size 0.18 mum; CMOS technology; Driver circuits; Feedback; Gain; High power amplifiers; Joining processes; Linearity; Multiaccess communication; Power amplifiers; Power generation; CMOS; WCDMA; bias; efficiency; feedback; linearity; power amplifier; sweet spot;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-6240-7
Type :
conf
DOI :
10.1109/RFIC.2010.5477399
Filename :
5477399
Link To Document :
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