IC compatible top down process for Silicon Nanowire fet arrays with three {100} surfaces for (BIO) chemical sensing

Author

Moh, T.S.Y. ; Maruyama, Y. ; Shen, C. ; Pandraud, G. ; de Smet, L.C.P.M. ; Tong, H.D. ; van Rijn, C. ; Sudhölter, E. J R ; Sarro, P.M.

Author_Institution

Delft Inst. of Microsyst. & Nanoelectron., Delft Univ. of Technol., Delft, Netherlands

fYear

2011

fDate

5-9 June 2011

Firstpage

1590

Lastpage

1593

Abstract

We report on a relatively simple and cost-effective method for fabrication of Silicon Nanowire Field-Effect Transistor (SiNW FET) arrays with three {100} surfaces via IC-compatible, top-down processes. Devices fabricated with this process offers an extra advantage compared to other top down fabrication techniques by not just only offering one or two, but instead three well-defined surfaces. The method offers a precise control of the NWs width (down to sub-100nm) without the need for nanolithography. In addition, very smooth and straight sidewalls are obtained. The process flow requires just one mask step and room-temperature, wet etching for the nanowire patterning and is thus suitable for wafer-scale fabrication of nanowires arrays. Device characterization includes electrical characterization and pH measurements were performed using the fabricated SiNW FET arrays.

Keywords

biosensors; chemical sensors; elemental semiconductors; etching; field effect transistors; nanoelectronics; nanofabrication; nanopatterning; nanosensors; nanowires; pH measurement; silicon; wafer-scale integration; IC compatible top down process; Si; SiNW FET array fabrication; biosensing; chemical sensing; electrical characterization; field effect transistor; nanowire patterning; pH measurement; silicon nanowire FET arrays; wafer-scale fabrication; wet etching; Etching; FETs; Fabrication; Nanobioscience; Nanolithography; Silicon; {100} Surfaces; IC Compatible Wafer Scale Fabrication; Silicon Nanowires FET Arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969796

Filename

5969796