DocumentCode
2539904
Title
Performance of pn-junction diode lumped models for circuit simulators
Author
López, Toni ; Alarcón, Eduard
Author_Institution
Philips Res. Labs., Aachen
fYear
2006
fDate
21-24 May 2006
Abstract
An analytical approach is carried out to compare the performance of various diode lumped models for circuit simulators. Both frequency and time domain analysis are applied that justify the need of extending the basic charge-control model to more than a simple charge storage node in order to reduce the highly inaccurate prediction of the distributed diffusion and recombination processes that govern the dynamics of pn-junctions, which can effectively be finer modeled with a single zero-pole representation under certain operating conditions. This in turn allows to more precisely assess the impact of the device switching behavior in the application without compromising the required computation power
Keywords
circuit simulation; lumped parameter networks; p-n junctions; semiconductor diodes; charge control model; charge storage node; circuit simulators; device switching; diffusion process; diode lumped models; pn-junction; recombination process; time domain analysis; zero pole representation; Analytical models; Circuit analysis computing; Circuit simulation; Computational modeling; Equations; Power system modeling; Predictive models; Radiative recombination; Semiconductor diodes; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location
Island of Kos
Print_ISBN
0-7803-9389-9
Type
conf
DOI
10.1109/ISCAS.2006.1693073
Filename
1693073
Link To Document