• DocumentCode
    2539904
  • Title

    Performance of pn-junction diode lumped models for circuit simulators

  • Author

    López, Toni ; Alarcón, Eduard

  • Author_Institution
    Philips Res. Labs., Aachen
  • fYear
    2006
  • fDate
    21-24 May 2006
  • Abstract
    An analytical approach is carried out to compare the performance of various diode lumped models for circuit simulators. Both frequency and time domain analysis are applied that justify the need of extending the basic charge-control model to more than a simple charge storage node in order to reduce the highly inaccurate prediction of the distributed diffusion and recombination processes that govern the dynamics of pn-junctions, which can effectively be finer modeled with a single zero-pole representation under certain operating conditions. This in turn allows to more precisely assess the impact of the device switching behavior in the application without compromising the required computation power
  • Keywords
    circuit simulation; lumped parameter networks; p-n junctions; semiconductor diodes; charge control model; charge storage node; circuit simulators; device switching; diffusion process; diode lumped models; pn-junction; recombination process; time domain analysis; zero pole representation; Analytical models; Circuit analysis computing; Circuit simulation; Computational modeling; Equations; Power system modeling; Predictive models; Radiative recombination; Semiconductor diodes; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
  • Conference_Location
    Island of Kos
  • Print_ISBN
    0-7803-9389-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2006.1693073
  • Filename
    1693073