DocumentCode :
2540322
Title :
Axially stretched nano-thick piezoresistive silicon clamped-beams to sense specific-reaction-induced double-side surface-stress with much higher sensitivity than cantilevers
Author :
Chen, Ying ; Xu, Pengcheng ; Li, Xinxin
Author_Institution :
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Shanghai, China
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
2574
Lastpage :
2577
Abstract :
Presented is a novel silicon piezoresistive double-clamped beam with nano-thickness. It senses double-side surface-stress induced by molecular self-assembly or specific bio/chemical reaction. For the first time, both theoretical analysis and experiments results indicate that, when the thickness is down-scaled into nano-scale, the sensitivity of the clamped-beam piezoresistive self-sensing beam will be significantly higher than that of conventional piezoresistive micro-cantilever sensors.
Keywords :
beams (structures); nanosensors; piezoresistive devices; self-assembly; stress measurement; Si; axially stretched nano-thick piezoresistive silicon clamped beam; bio/chemical reaction; clamped beam piezoresistive self-sensing beam; double side surface stress sensor; molecular self-assembly; piezoresistive double clamped beam; specific reaction induced double side surface stress; Doping; Piezoresistance; Self-assembly; Sensitivity; Sensors; Silicon; Stress; Nano-scale size-effect; double-side modification; high sensitivity; piezoressitive beam; surface-stress sensing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969823
Filename :
5969823
Link To Document :
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