DocumentCode
2540384
Title
The development of new copper ball bonding-wire
Author
Mori, Satoru ; Yoshida, Hideaki ; Uchiyama, Naoki
Author_Institution
Mitsubishi Metal Co. Ltd., Saitama, Japan
fYear
1988
fDate
9-11 May 1988
Firstpage
539
Lastpage
545
Abstract
By adding dopants to high-purity 6N Cu, a new Cu ball-bonding wire, MCl, was developed. This wire offers a number of significant advantages over 6N Cu bonding wire: (1) it is possible to reduce the loop bend and the scattering of loop height when MCl is used instead of 6N Cu wire; (2) although MCl contains some dopants, the ball hardness of MCl is slightly lower than that of 6N Cu wire; (3) MCl has higher ball-bonding strength and wider preferred bonding condition window. It is shown that the ball-neck strength of Cu is stronger than that of Au. This higher strength of Cu ball neck contributes to the excellent loop stability in the molding process. It is also possible to make a long loop, which is essential for high-lead-count semiconductor devices, with this wire.<>
Keywords
annealing; copper; hardness; lead bonding; tensile testing; Cu ball bonding wire; MCl; annealed wire; ball-neck strength; high-lead-count semiconductor devices; loop bend; loop height scattering; loop stability; microhardness; molding process; tensile test; Annealing; Bonding; Copper; Gold; Mechanical factors; Shape; Stability; Temperature; Testing; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Components Conference, 1988., Proceedings of the 38th
Conference_Location
Los Angeles, CA, USA
Type
conf
DOI
10.1109/ECC.1988.12645
Filename
12645
Link To Document