Inversion layer properties of 〈110〉 uniaxially strained silicon n-channel MOSFETs

Author

Rahman, Samia Nawar ; Faraby, Hasan Mohammad ; Rahman, Manzur ; Huda, Quamrul ; Haque, Anisul

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol. (BUET), Dhaka

fYear

2008

fDate

20-22 Dec. 2008

Firstpage

438

Lastpage

441

Abstract

This paper discusses the influence of <110> uniaxial tensile stress on some of the inversion layer properties of (100) silicon n-channel MOSFETs. Quantum mechanical calculations are performed assuming Airy function approximation holds. Uniaxial tensile strain lowers the eigen-energies and increases the occupation of the ground state. Average inversion layer penetration is also decreased. The change in the surface electric field due to strain is insignificant.

Keywords

MOSFET; elemental semiconductors; ground states; internal stresses; inversion layers; silicon; <110> uniaxial tensile stress; (100) silicon n-channel MOSFET; Airy function approximation; Si; eigenenergies; ground state; inversion layer properties; quantum mechanical calculations; surface electric field; Capacitive sensors; Effective mass; Function approximation; MOS devices; MOSFETs; Quantum mechanics; Silicon; Stationary state; Tensile stress; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4244-2014-8

Electronic_ISBN

978-1-4244-2015-5

Type

conf

DOI

10.1109/ICECE.2008.4769247

Filename

4769247