InN-based dual channel high electron mobility transistor

This paper describes the theoretical design and predicts the performances using Monte Carlo simulation of InN-based dual channel high electron mobility transistor (HEMT). A high sheet carrier concentration and strong electron confinement at specific interfaces of the InN-based heterostructures are predicted as a consequence of piezoelectric and spontaneous polarization effects. The calculated sheet carrier concentration reaches as high as 1.64times10¹⁴ cm^-2 for dual channel HEMT. The sheet carriers generated in InN-based double channel are found to be higher than the reported values for the conventional single channel HEMTs. The 2DEGs mobility is found to be 11.76times10⁴ cm² V^-1 sce^-1 at sheet carrier concentration, n_s = 1.2times10¹³ cm^-2 for 100 K. At room temperature, the drain current of the proposed InN-based dual channel HEMTs is 1.2 Amm^-1 at gate voltage V_G = 2 V. The drain current capabilities are found to be substantially superior to the conventional single channel HEMTs.