Title :
C-V characteristics of n-channel double gate MOS structures incorporating the effect of interface states
Author :
Alam, A. ; Ahmed, S. ; Alam, M.K. ; Khosru, Quazi D M
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
The Capacitance-Voltage (CV) characteristics of n-channel Double Gate (DG) MOS structures are investigated. An accurate and efficient fully coupled 1-D Schrodinger-Poisson self-consistent solver has been used. The numerical solver employs finite element method to calculate different electrostatics of n-channel DGMOS structures. The CV characteristics are modeled by taking the effect of interface trapped charges into account for varying densities of interface states. Both high frequency (HF) and low frequency (LF) operations are considered.
Keywords :
MIS devices; Poisson equation; Schrodinger equation; finite element analysis; interface states; semiconductor device models; 1-D Schrodinger-Poisson self-consistent solver; capacitance-voltage characteristics; electrostatics; finite element method; interface states; n-channel double gate MOS structures; Capacitance-voltage characteristics; Electrostatics; Finite element methods; Frequency; Interface states; MOS devices; Poisson equations; Quantum mechanics; Schrodinger equation; Threshold voltage;
Conference_Titel :
Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-2014-8
Electronic_ISBN :
978-1-4244-2015-5
DOI :
10.1109/ICECE.2008.4769251
