Title :
Functional device design using nonuniform gate voltage: Analytical model of a novel MOSFET
Author_Institution :
19 Churchill Road, Morwell, Victoria 3840, Australia
Abstract :
A new mode of MOSFET operation with distributed gate voltage is proposed and a one-dimensional (1D) analytical model presented. Operation in the strong inversion regime of the laterally nonuniform (LNU) long channel devices is analyzed at room temperatures using gradual channel approximation considering carrier transport by drift alone. Models with linearly graded gate voltage show that these four terminal devices are capable of performing multiplication operation in a single device, making them inherently superior in speed, linearity and power dissipation to multistage multiplier circuits currently used in communication and analog VLSI circuits.
Keywords :
MOSFET; semiconductor device models; MOSFET; carrier transport; distributed gate voltage; functional device design; nonuniform gate voltage; temperature 293 K to 298 K; Analytical models; CMOS technology; Design engineering; Dielectric substrates; Distributed computing; MOSFET circuits; Silicon on insulator technology; Threshold voltage; Transistors; Very large scale integration;
Conference_Titel :
Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-2014-8
Electronic_ISBN :
978-1-4244-2015-5
DOI :
10.1109/ICECE.2008.4769252
