Functional device design using nonuniform gate voltage: Analytical model of a novel MOSFET

A new mode of MOSFET operation with distributed gate voltage is proposed and a one-dimensional (1D) analytical model presented. Operation in the strong inversion regime of the laterally nonuniform (LNU) long channel devices is analyzed at room temperatures using gradual channel approximation considering carrier transport by drift alone. Models with linearly graded gate voltage show that these four terminal devices are capable of performing multiplication operation in a single device, making them inherently superior in speed, linearity and power dissipation to multistage multiplier circuits currently used in communication and analog VLSI circuits.