Title :
Super Barrier Rectifier - A New Generation of Power Diode
Author :
Rodov, V. ; Ankoudinov, A.L. ; Taufik
Author_Institution :
APD Semiconductor Inc., 1 Lagoon Drive, Suite 410, Redwood City, CA 94065 USA
fDate :
Feb. 25 2007-March 1 2007
Abstract :
The main principle behind the new Super Barrier Rectifier (SBR) approach is to create the "Super" barrier for majority carriers without unreliable metal-semiconductor Schottky contact. SBR technology creates such barrier in the MOS channel. The height of this barrier can be easily adjusted by the doping concentration in the channel. This paper demonstrates that the new power diodes combine high performance and high reliability for low voltage applications (below 100V). The underlying concepts and analysis of operation are presented as well as the lab test results that compare performance and reliability between Schottky and the new SBR diode.
Keywords :
Leakage current; Low voltage; Power generation; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Surges; Temperature; Voltage control;
Conference_Titel :
Applied Power Electronics Conference, APEC 2007 - Twenty Second Annual IEEE
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-4244-0713-3
DOI :
10.1109/APEX.2007.357645
