Title :
Comparison of the minimum breakdown level of SF6 mixtures in inhomogeneous gaps under steep wave front impulse and double-exponential impulse
Author :
Wang, C.X. ; Chalmers, I.D. ; Qiu, Y.
Author_Institution :
Dept. of Electr. Eng., Xi´´an Jiaotong Univ., China
Abstract :
The minimum breakdown level of SF6 mixtures in inhomogeneous gaps under steep wave front impulse and double-exponential impulse was studied experimentally. The leader guiding voltage increases, whereas the streamer guiding voltage decreases with air content ratio in SF6/air mixtures at constant total pressure. The fact that in pure SF6Vi(min) coincides with Vstep(min) and in SF6/air mixtures Vi(min) exceeds Vstep(min) shows that, unlike in pure SF6, the corona stabilization effect is always operative with the 4/1500-μs impulse. For mixtures in which breakdown takes place as a streamer breakdown, Vi(min) may exhibit a peak which is nonexistent in the case of Vstep(min). In applications where fast transients occur, possible SF6/air mixtures should be in the high-SF6-content and high-pressure region in the corresponding leader-to-streamer transition graph, the form of which varies with gap nonuniformity. This would ensure that the minimum breakdown voltage of the mixture increases with air content for both slow- and fast-rising impulses
Keywords :
corona; electric breakdown of gases; gaseous insulation; spark gaps; sulphur compounds; transients; SF6; SF6 air mixtures; air content ratio; constant total pressure; corona stabilization effect; double-exponential impulse; fast transients; gap nonuniformity; inhomogeneous gaps; leader guiding voltage; minimum breakdown level; steep wave front impulse; streamer breakdown; streamer guiding voltage; Breakdown voltage; Coaxial components; Corona; Dielectric breakdown; Electric breakdown; Monitoring; Oscilloscopes; Space charge; Sulfur hexafluoride; Voltage fluctuations;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1988. Proceedings., Second International Conference on Properties and Applications of
Conference_Location :
Beijing
DOI :
10.1109/ICPADM.1988.38497