Title :
InxGa1-xN based multi junction concentrator solar cell
Author :
Islam, Md Sherajul ; Rahman, A. K M Zillur ; Chowdhury, Md A R ; Islam, Md Rafiqul ; Bhuiyan, Ashraful G.
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol. (KUET), Khulna
Abstract :
In this paper, the InxGa1-xN based multi junction solar cell under concentrator has been designed theoretically and the performances are evaluated. The consequence of increasing the concentration ratio up to 500 suns and the number of junctions up to 8 are predicted. A relative comparison of efficiency with and without concentrator has also been studied. The efficiency of InxGa1-xN-based single junction, triple junction, and eight junction solar cells without employing concentrator were found to be 24.67, 37.57, and 46.15% respectively, while those using concentrator have been improved to 41.07, 46.92 and 50.41% respectively.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; solar cells; solar energy concentrators; wide band gap semiconductors; InxGa1-xN; multijunction solar cell; solar concentrator; Costs; Design engineering; Optical materials; Performance evaluation; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Semiconductor materials; Solar power generation; Sun;
Conference_Titel :
Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-2014-8
Electronic_ISBN :
978-1-4244-2015-5
DOI :
10.1109/ICECE.2008.4769276
