2.5 Gbit/s data rate transmission using low threshold GaAs (/spl lambda/=830 nm) VCSELs

Author

Schnitzer, P. ; Fiedler, U. ; Grabherr, M. ; Reiner, G. ; Weigl, Weigl ; Tarin, C. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

73

Abstract

In summary, we have investigated 2.5 Gbit/s PRBS data transmission over 500 m graded index fiber using short wavelength (830 nm) VCSEL transmitters. A BER of 10/sup -11/ is obtained for -21.3 dBm received optical power. Higher data rates can be achieved by reducing the parasitic VCSEL capacitance due to the oxidized layer.

Keywords

III-V semiconductors; capacitance; gallium arsenide; infrared sources; laser cavity resonators; laser transitions; optical transmitters; semiconductor lasers; surface emitting lasers; 2.5 Gbit/s; 830 nm; GaAs; Gbit/s data rate transmission; PRBS data transmission; VCSELs; graded index fiber; higher data rates; low threshold GaAs; oxidized layer; parasitic VCSEL capacitance; received optical power; short wavelength VCSEL transmitters; Bit error rate; Clocks; Data communication; Gallium arsenide; Optical attenuators; Optical receivers; Optical transmitters; Repeaters; Stimulated emission; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571555

Filename

571555