Title :
Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices
Author :
Duong, Tam H. ; Berning, David W. ; Hefner, A.R. ; Smedley, Keyue M.
Author_Institution :
Dept. of Electrical Engineering and Computer Science, University of California, Irvine, Irvine, CA 92697; National Institute of Standards and Technology, Semiconductor Electronics Division, Gaithersburg, MD 20899
fDate :
Feb. 25 2007-March 1 2007
Abstract :
This paper presents a test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to test a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5 kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 4.5 kV Silicon IGBTs, 10-kV SiC MOSFETs and 15 kV stacked silicon diodes.
Keywords :
Burst switching; DC-DC power converters; Diodes; Insulated gate bipolar transistors; MOSFETs; Silicon carbide; Stability; Switching converters; System testing; Voltage;
Conference_Titel :
Applied Power Electronics Conference, APEC 2007 - Twenty Second Annual IEEE
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-4244-0713-3
DOI :
10.1109/APEX.2007.357673
