Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

Author

Duong, Tam H. ; Berning, David W. ; Hefner, A.R. ; Smedley, Keyue M.

Author_Institution

Dept. of Electrical Engineering and Computer Science, University of California, Irvine, Irvine, CA 92697; National Institute of Standards and Technology, Semiconductor Electronics Division, Gaithersburg, MD 20899

fYear

2007

fDate

Feb. 25 2007-March 1 2007

Firstpage

1240

Lastpage

1246

Abstract

This paper presents a test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to test a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5 kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 4.5 kV Silicon IGBTs, 10-kV SiC MOSFETs and 15 kV stacked silicon diodes.

Keywords

Burst switching; DC-DC power converters; Diodes; Insulated gate bipolar transistors; MOSFETs; Silicon carbide; Stability; Switching converters; System testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference, APEC 2007 - Twenty Second Annual IEEE

Conference_Location

Anaheim, CA, USA

ISSN

1048-2334

Print_ISBN

1-4244-0713-3

Type

conf

DOI

10.1109/APEX.2007.357673

Filename

4195876