Mode-locking at very high repetition rates in multi-contact DBR laser diodes

The laser used in this study has four contacts corresponding to a saturable absorber (75 /spl mu/m), a gain section (750 /spl mu/m), a phase control section (150 /spl mu/m) and a DBR (90 /spl mu/m). Both the absorber and gain sections consist of three InGaAs strained quantum wells separated by InGaAsP quaternary barriers. A 1.3-/spl mu/m bandgap wavelength InGaAsP was used for the phase control section and DBR waveguides. The absorber facet was coated for high-reflectivity, leading to self-colliding pulse mode-locking operation at the absorber and stabilised mode-locking.