Title :
High rate pulses from mode-locked semiconductor laser diodes with DBR
Author :
Lu, Fuyun ; Freking, Robert ; Gopinath, Anand
Author_Institution :
Dept. of Phys., Nankai Univ., China
Abstract :
The dynamics of the establishment and stabilization of mode-locking have been investigated, and the ratio of the whole cavity length (L) to DBR length (L/sub DBR/) exerts a significant influence on harmonic mode locking when the facet reflectivities on the absorber and DBR sides of the laser diode are less than 30%. These results are in agreement with previous observations, and are reported here for the first time to the best of our knowledge. The mode-locked semiconductor laser diode length L, used in our simulations has gain section length (L/sub g/), absorber section length (L/sub l/), and DBR section length (L/sub DBR/). The gain and saturable absorber sections have the same modal index of 3.461, and are forward biased, and grounded or reverse biased respectively.
Keywords :
distributed Bragg reflector lasers; laser cavity resonators; laser mode locking; laser modes; laser theory; optical saturable absorption; refractive index; semiconductor device models; semiconductor lasers; DBR length; DBR section length; DBR side absorber; absorber section length; dynamics; facet reflectivities; forward biased; gain section length; harmonic mode locking; high rate pulses; modal index; mode-locked semiconductor laser diode length; mode-locked semiconductor laser diodes; mode-locking stabilisation; reverse biased; saturable absorber sections; whole cavity length; Diode lasers; Distributed Bragg reflectors; Equations; Frequency modulation; Laser mode locking; Optical pulses; Physics; Power harmonic filters; Pulse modulation; Reflectivity;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571560
