Spatial analysis of ZnO thin films prepared by vertically aligned MOCVD

Author

Mishra, P. ; Patel, R. ; Hussain, B. ; Stansell, J. ; Kucukgok, B. ; Raja, M.Y. ; Lu, N. ; Ferguson, I.T.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of North Caroline at Charlotte, Charlotte, NC, USA

fYear

2014

fDate

15-17 Dec. 2014

Firstpage

67

Lastpage

70

Abstract

Zinc Oxide thin films were grown using a homemade metallorganic chemical vapor deposition apparatus with a non-centrosymmetric groove for the substrate. Films grown with relatively constant thickness and varying temperatures were tested using photoluminescence spectrometry, ex-situ spectral reflectance, and ex-situ transmittance measurements at five distinct points. Results are analyzed to evaluate the spatial consistency in thickness and optical characteristics of the ZnO films.

Keywords

II-VI semiconductors; MOCVD; photoluminescence; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; ex-situ spectral reflectance; ex-situ transmittance measurements; homemade metallorganic chemical vapor deposition apparatus; noncentrosymmetric groove; optical property; photoluminescence spectrometry; spatial analysis; vertically aligned MOCVD; zinc oxide thin films; Films; Heating; MOCVD; Nitrogen; Photonics; Presses; Zinc oxide; MOCVD; photoluminescence; spatial analysis; spectral reflectance; thin film; transmission; zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

High-capacity Optical Networks and Emerging/Enabling Technologies (HONET), 2014 11th Annual

Conference_Location

Charlotte, NC

Print_ISBN

978-1-4799-6939-5

Type

conf

DOI

10.1109/HONET.2014.7029363

Filename

7029363