DocumentCode :
254258
Title :
Spatial analysis of ZnO thin films prepared by vertically aligned MOCVD
Author :
Mishra, P. ; Patel, R. ; Hussain, B. ; Stansell, J. ; Kucukgok, B. ; Raja, M.Y. ; Lu, N. ; Ferguson, I.T.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of North Caroline at Charlotte, Charlotte, NC, USA
fYear :
2014
fDate :
15-17 Dec. 2014
Firstpage :
67
Lastpage :
70
Abstract :
Zinc Oxide thin films were grown using a homemade metallorganic chemical vapor deposition apparatus with a non-centrosymmetric groove for the substrate. Films grown with relatively constant thickness and varying temperatures were tested using photoluminescence spectrometry, ex-situ spectral reflectance, and ex-situ transmittance measurements at five distinct points. Results are analyzed to evaluate the spatial consistency in thickness and optical characteristics of the ZnO films.
Keywords :
II-VI semiconductors; MOCVD; photoluminescence; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; ex-situ spectral reflectance; ex-situ transmittance measurements; homemade metallorganic chemical vapor deposition apparatus; noncentrosymmetric groove; optical property; photoluminescence spectrometry; spatial analysis; vertically aligned MOCVD; zinc oxide thin films; Films; Heating; MOCVD; Nitrogen; Photonics; Presses; Zinc oxide; MOCVD; photoluminescence; spatial analysis; spectral reflectance; thin film; transmission; zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High-capacity Optical Networks and Emerging/Enabling Technologies (HONET), 2014 11th Annual
Conference_Location :
Charlotte, NC
Print_ISBN :
978-1-4799-6939-5
Type :
conf
DOI :
10.1109/HONET.2014.7029363
Filename :
7029363
Link To Document :
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