DocumentCode
2542744
Title
A 3V 110 /spl mu/W 3.1 ppm//spl deg/C curvature-compensated CMOS bandgap reference
Author
Guan, Xiaokang ; Wang, ZhiHua ; Ishikawa, Akira ; Tamura, Satoru ; Zhihua Wang ; Zhang, Chun
Author_Institution
Illinois Inst. of Technol., Chicago, IL
fYear
2006
fDate
21-24 May 2006
Lastpage
2864
Abstract
This paper presents a curvature-compensated bandgap reference (BGR) circuit implemented in 0.35 mum CMOS technology. The circuit delivers an output voltage of 1.09 V and achieves a temperature coefficient of 3.1 ppm/degC over [-20degC, 100degC] after trimming, a power supply rejection ratio of -80 dB at 1 KHz and an output noise level of 1.43 muV/sqrt(Hz) at 1 KHz. The BGR circuit consumes a current of 37 muA and the power supply ranges from 1.5 V to 3.3 V
Keywords
CMOS integrated circuits; reference circuits; 0.35 micron; 1 kHz; 1.09 V; 1.5 to 3.3 V; 110 muW; 37 muA; BGR circuit; CMOS bandgap reference; CMOS integrated circuit; curvature-compensation; CMOS technology; Circuits; Fuses; Operational amplifiers; Paper technology; Photonic band gap; Power supplies; Resistors; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location
Island of Kos
Print_ISBN
0-7803-9389-9
Type
conf
DOI
10.1109/ISCAS.2006.1693221
Filename
1693221
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