Title :
An overview of twin-flash technology
Author :
Stein, E.G. ; Kamienski, V. ; Isler, M. ; Mikolajick, T. ; Ludwig, C. ; Schulze, N. ; Nagel, N. ; Riedel, S. ; Willer, J. ; Küster, K.H.
Author_Institution :
Infineon Technol., Dresden
Abstract :
The twin-flash cell technology relies on the charge trapping storage concept. The concept is described. The fabrication of the technology nodes ranges from 170 nm to 90 nm. The realization of the concept in different cell types is described. The shrink path beyond the 40 nm node is shown and discussed
Keywords :
flash memories; hot carriers; 170 to 90 nm; channel hot electron injection; charge trapping storage; hot hole injection; twin-flash cell technology; Channel hot electron injection; Charge carrier processes; Costs; Digital cameras; Electron traps; Fabrication; Hot carriers; Programming profession; Smart phones; Voltage;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2005
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-9408-9
DOI :
10.1109/NVMT.2005.1541378
