DocumentCode
2543020
Title
Variability issue and advanced process technology for variation mitigation
Author
Mogami, Tohru
Author_Institution
MIRAI-Selete, Tsukuba, Japan
fYear
2011
fDate
9-10 June 2011
Firstpage
7
Lastpage
12
Abstract
The variation of device characteristics has been introduced and discussed. The local and random variation is a critical issue for <;50nm devices and the mechanisms of the local and random variation have been discussed, including RDF. Carbon co-implantation technique has been developed to mitigate Vth variation. New techniques, including each process and process integration, should be developed to mitigate further variations.
Keywords
ion implantation; semiconductor doping; RDF; advanced process technology; carbon co-implantation technique; device characteristics; process integration; random dopant fluctuation; random variation; variability issue; variation mitigation; Boron; Carbon; Junctions; Logic gates; MOSFET circuits; MOSFETs; Resource description framework;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location
Kyoto
Print_ISBN
978-1-61284-131-1
Type
conf
DOI
10.1109/IWJT.2011.5969988
Filename
5969988
Link To Document