Fabrication technique for ultra low leakage embedded DRAM cell transistor

DRAM (Dynamic Random Access Memory) cell consists of a transistor and a capacitor, and the capacitor needs to be charged or discharged to achieve the memory function. However, as the technology has been advanced, both cell transistor and a capacitor have been significantly shrunk. So charge leakage has been a crucial issue for present DRAM. To prevent the leakage, commodity DRAM maker chooses non silicide, and low S/D (Source/Drain) doping concentration. On the other hand, as LSI applications expand, high speed DRAM demand has been increasing. So embedded DRAM and silicide applied technology, i.e. leakage control techniques could be a semiconductor manufacturers´ competitiveness today.