• DocumentCode
    2543117
  • Title

    Integrated silicon on insulator-ferroelectric capacitor process for radiation hard non volatile universal memory applications

  • Author

    Joshi, Vikram ; Ohno, Morifumo ; Ida, Jiro ; Nagatomo, Yoshiki ; Strauss, Karl

  • Author_Institution
    Symetrix Semicond. Corp., Palo Alto, CA
  • fYear
    2005
  • fDate
    10-10 Nov. 2005
  • Lastpage
    40
  • Abstract
    We report for the first time the successful integration of strontium-bismuth-tantalate ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors do not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors
  • Keywords
    bismuth compounds; ferroelectric capacitors; ferroelectric storage; radiation hardening (electronics); random-access storage; silicon-on-insulator; strontium compounds; FD-SOI transistors; SOI substrate; nonvolatile universal memory; radiation hard; silicon on insulator-ferroelectric capacitor process; strontium-bismuth-tantalate ferroelectric capacitors; Capacitors; Ferroelectric materials; Insulation; Laboratories; NASA; Plugs; Propulsion; Silicon on insulator technology; Substrates; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2005
  • Conference_Location
    Dallas, TX
  • Print_ISBN
    0-7803-9408-9
  • Type

    conf

  • DOI
    10.1109/NVMT.2005.1541389
  • Filename
    1541389
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2543117