Title :
A 1.0 Mbit SBT ferroelectric memory with Trinion cell architecture
Author :
Ho, Iu-Meng Tom ; Wen, Calvin ; Hsiao, Chang ; Tang, Wing ; de Araujo, Carlos A Paz ; McMillan, L.D.
Author_Institution :
IOTA Technol. Inc., San Jose, CA
Abstract :
Even with the total shipment of contactless smartcards, using SBT ferroelectric capacitors as embedded non-volatile memory, surpassing the 100 million mark and the current monthly shipment surpassing the 7 million mark, a commercially available high-density SBT ferroelectric memory FeRAM is still an elusive target. A new Trinion cell architecture seems to be able to provide solutions to all of the disturbances and noises associated with the conventional FeRAM architecture. A 1.0Mbit Trinion FeRAM supporting both asynchronous and synchronous timing has been developed using a three metal 0.25mum CMOS process from Oki Electric Industry of Japan. It was 100% functional at the first wafer. All 1.0Mbit locations are working equally well without any soft spots. At VDD of 3.3V, the asynchronous address to data out time is measured at 35ns. Power dissipation at VDD = 3.6V is at 0.3mA per MHz. In the following paper, we present the Trinion cell architecture and discuss the differences between the Trinion and conventional architectures
Keywords :
CMOS memory circuits; embedded systems; ferroelectric capacitors; ferroelectric storage; logic design; random-access storage; 0.25 micron; 0.3 mA; 0.35 ns; 10 Mbit; 3.3 V; 3.6 V; CMOS process; FeRAM architecture; SBT ferroelectric memory; Trinion cell architecture; asynchronous timing; contactless smartcards; embedded nonvolatile memory; ferroelectric capacitors; synchronous timing; CMOS process; Capacitors; Ferroelectric films; Ferroelectric materials; Metals industry; Nonvolatile memory; Power dissipation; Random access memory; Time measurement; Timing;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2005
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-9408-9
DOI :
10.1109/NVMT.2005.1541390
