DocumentCode :
2543171
Title :
Physics of amorphization
Author :
Nakagawa, Sachiko T.
Author_Institution :
Grad. Sch. of Sci., Okayama Univ. of Sci., Okayama, Japan
fYear :
2011
fDate :
9-10 June 2011
Firstpage :
40
Lastpage :
43
Abstract :
The amorphization due to the ion impact after the crystalline to amorphous (CA) transition is evaluated by the long-range-order parameter. The CA transition occurred much later than the introduced energy is released, in the order of a few tens of picoseconds. Although the heating rate in a MD is much higher than the real system, calculation even found the reality of the presence of global phonons whose behavior is slowly and oscillatory. After the CA transition, if one observed the atomic distribution of damaged crystal it may appear just random. Nevertheless, if the post-annealing is applied to, some preparation may be progressing in the material for the recovery of damaged crystallinity during (THB <; TA) and after (THB = TA) the heating process, before the arrival of the longest limit of a MD (~ nanosecond). Namely, slight change proceeds in a long blackout tunnel until it will be observed as the so-called amorphous (uniformly distributed atoms in an area) state.
Keywords :
amorphisation; annealing; crystallisation; heating; ion-surface impact; phonons; CA transition; amorphization; atomic distribution; crystalline to amorphous transition; damaged crystallinity; global phonon; heating process; heating rate; ion impact; long-range-order parameter; oscillatory; physics; postannealing; Annealing; Conferences; Crystals; Heating; Junctions; Lattices; Vibrations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-61284-131-1
Type :
conf
DOI :
10.1109/IWJT.2011.5969996
Filename :
5969996
Link To Document :
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